Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• the coverage to nominally 48 Å did not significantly change the LEED image (see Supporting Information File 1, Figure S3). This indicated that increasing the coverage does not change the lateral order at the contact layer and pointed towards Stranski–Krastanov growth (island on wetting layer) [70

• ] since the signal from the interface was visible even when a nominal coverages corresponding to several layers was deposited. Stranski–Krastanov growth has been suggested for F4PEN on Cu(111) [63], and furthermore was supported by thickness-dependent XPS, where the relative intensity barely changed as

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• can be suppressed to a large extent, in agreement with our own simulations [26]. This situation differs from most previous EM experiments, in which it was difficult to separate EM from thermal effects. For our experiments we use ultrathin Ag films (thickness 5 nm), which exhibit Stranski–Krastanov

• growth behavior so that they are nanocrystalline with an average grain size between 30 and 50 nm. These grain boundaries turned out to be the main source of lateral resistance [27]. Therefore, the EM-induced material transport is mainly expected to take place at these boundaries. EM at grain boundaries

Antimony deposition onto Au(111) and insertion of Mg

• Lingxing Zan,
• Da Xing,
• Abdelaziz Ali Abd-El-Latif and
• Helmut Baltruschat

Beilstein J. Nanotechnol. 2019, 10, 2541–2552, doi:10.3762/bjnano.10.245

• layers. A somewhat atypical Stranski–Krastanov growth was thus observed during overpotential deposition. After stripping of Sb at −0.21 V the Au(111) substrate is not smooth again. Figure 8a shows the Au(111) surface after stripping of Sb at −0.21 demonstrating a severe roughness on the atomic scale. As

Uniform Sb₂S₃ optical coatings by chemical spray method

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Ilona Oja Acik,
• Arvo Mere and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

• , a.k.a. Volmer–Weber growth; 2D layer-by-layer growth occurs if Equation 2 is valid, a.k.a. Frank–Van der Merwe growth; combined 2D layer-by layer and 3D island growth occurs if Equation 3 is valid, a.k.a. Stranski–Krastanov growth [36][41][42][43]. Furthermore, SEM surface studies show cap-shaped

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• shown in Figure 1. The appearance of PLWL peaks indicates the Stranski–Krastanov growth mode of QDs. The photoluminescence of a sample with one QD layer is characterized by the absence of a peak of the excited states, and the PLGS peak has a full width at half maximum (FWHM) of ca. 118 meV with a

Synthesis of carbon nanowalls from a single-source metal-organic precursor

• André Giese,
• Sebastian Schipporeit,
• Volker Buck and
• Nicolas Wöhrl

Beilstein J. Nanotechnol. 2018, 9, 1895–1905, doi:10.3762/bjnano.9.181

• generated from the gaseous radicals in the plasma and condensate on the surface to form nanoislands with dangling bonds as described in the Stranski–Krastanov growth model (stage 1). In stage 2, a high density of carbon nanoislands is reached on the substrate, offering a rough surface with a considerable

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

• Alberto Curcella,
• Romain Bernard,
• Yves Borensztein,
• Silvia Pandolfi and
• Geoffroy Prévot

Beilstein J. Nanotechnol. 2018, 9, 48–56, doi:10.3762/bjnano.9.7

• classical 3D or Volmer–Weber growth. Stranski–Krastanov growth is obtained with αu(i < ic) = 0, αd(i ≤ ic) >> 1, αu(i ≥ ic) >> 1 and αd(i > ic) = 0, where ic is the critical thickness above which 3D islands form. Figure 3 presents the comparison of the experimental and simulated AES intensities for the

• increases, a transition is observed between an imperfect layer-by-layer growth and a Stranski–Krastanov growth mode (ic = 1). This transition is observed by AES between 473 K and 505 K, and between 506 K and 540 K by STM. These differences may be due to the experimental uncertainties on the temperature

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• Abstract The Stranski–Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even

• ; Stranski–Krastanov growth; Introduction The nucleation and growth of Ge islands on a Si(001) substrate have been the subject of numerous investigations with the aim of understanding the fundamental processes involved in the Stranski–Krastanov growth process and to produce original devices based on a Ge

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K. Keywords: V/III flux ratio; GaSb quantum dots; growth temperature; semiconductor laser; Stranski–Krastanov growth; Introduction GaSb quantum dots (QDs) grown on